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FIZIKA A 11 (2002) 4 , 139-152
 
STRUCTURAL AND ELECTRICAL PROPERTIES OF CuSbTe2, CuSbSe2
AND CuSbS2 CHALCOGENIDE THIS FILMS
LAILA I. SOLIMANa, AZIZA M. ABO EL SOADa, HAMDIA
A. ZAYEDb and SAMMER A. EL GHFARb
aNational Research Centre, Solid State Physics Department,
Dokki, Cairo, Egypt
bGirls College for Art, Science and Education Ain Shams University
Received 9 January 2002; revised manuscript received 2 July 2002
Accepted 11 November 2002 Online 07 February 2003
The ternary chalcogenides CuSbTe2, CuSbSe2 and CuSbS2
were synthesized by the direct fusion technique. The thin films of these compounds were
prepared by thermal evaporation under vacuum of about 1.3 mPa (10-5
Torr) and the rate of deposition was 30 nm/min. The structural properties of CuSbTe2,
CuSbSe2 and CuSbS2 in powder and thin film forms were investigated
by X-ray diffraction (XRD) and transmission electronmicroscopy. Microprobe analysis
technique was used to investigate the composition of the three alloys and of their films.
The electrical conductivity s and the thermoelectrical power Q
have been measured for all as-deposited and annealed thin films, as a function of
temperature in the range from 80 to 500 K. It was found that the electrical conductivity s, the carrier concentration P, the mobility m
and the thermoelectric power Q increase when increasing the annealing temperature for
CuSbTe2, CuSbSe2 and CuSbS2 thin films. The increase of s, P, m and Q, and also the decrease of
the activation energy DE with increasing temperature for the
as-deposited CuSbTe2, CuSbSe2 and CuSbS2 thin films, can
be attributed to the change in the structure of these films from the amorphous to the
crystalline state.
PACS numbers: 61.10.-i, 73.50.-h
UDC 538.975
Keywords: ternary chalcogenides CuSbTe2, CuSbSe2 and CuSbS2,
thin films, amorphous, crystalline, as-deposited, annealed, electrical conductivity, Hall
effect, thermoelectrical power, carrier concentration, mobility, activation energy
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